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LED and Laser diode Characteristics Apparatus
A light-emitting diode (LED) is a semiconductor light source. 
Like a normal diode, the LED consists of a chip of semiconducting material doped with impurities to create a p-n junction. 
As in other diodes, current flows easily from the p-side, or anode, to then-side, or cathode, but not in the reverse direction. 
When an electron meets a hole, it falls into a lower energy level and releases energy in the form of a photon. 
The wavelength of the light emitted, and therefore its colour depends on the band gap energy of the materials forming the p-n junction. 
Typical I-V Characteristics of LED in forwarding bias are shown in the fig.
Charge-carriers-electrons and holes - flow into the junction from electrodes with different voltages. 
A laser diode, like many other semiconductor devices, is formed by doping a very thin layer on the surface of a crystal wafer.
A laser diode is a laser where the active medium is a semiconductor similar to that found in a light-emitting diode. 
The crystal is doped to produce an n-type region and a p-type region, one above the other, resulting in a p-n junction, or diode.

Procedure:
LEDs are connected in forward bias arrangement and applied a voltage across LED is varied & corresponding current is measured.
The result is tabulated and plotted on the graph. 
In second part voltage applied across Laser diode is varied.
Its corresponding output is measured & plotted.


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