Determination of Energy Band Gap in Semiconductor Diode Manufacturer,Supplier and Exporter in India

Product Code : JL-AET-1460

Determination of Energy Band Gap in Semiconductor Diode 
Object:-

• To draw the characteristics of a P-N junction Diode for reverse saturation current and temperature
• To determine the Energy Band Gap in a P-N Junction Diode

Features:-

• 2V D.C. at 10mA, regulated Power Supply
• Digital Micro ammeter, 3½ digits having range 200mA D.C.
• Semiconductor Diode
• Thermometer 0-110 °C
• Oven, Electrically heated to heat the Semiconductor Diode
• Mains ON/OFF switch and Fuse
• The unit is operative on 230V ±10% at 50Hz A.C. Mains
• Adequate no. of patch cords stackable from rear both ends 4mm spring loaded plug length ½ metre
• Good Quality, reliable terminal/sockets are provided at appropriate places on panel for connections /observation of waveforms
• Strongly supported by detailed Operating Instructions, giving details of Object, Theory, Design procedures, Report Suggestions and Book References